Impact of Zr Content on Multiphase Zirconium–tungsten Oxide

With global population growth and increased electronics consumption, how to effectively use electronic device without depletion has become one of the urgent world research issues. Diodes, such as P-N junction, Zener diode, Schottky diode, Tunnel diode, Crystal diode, Light emitting diode …etc have been extensively studied and applied recently.

Among this Schottky diode (SD), metal-semiconductor (MS) type schottky diode has attracted much attention due to its high efficiency of the electronic devices. However, many of these contacts are not fabricated as hardly MS contacts; they are fabricated as metal-interlayer-semiconductor (MIS) contacts. These structures fabricated by cov¬ering a semiconductor substrate with an organic/inor¬ganic layer on which a metal electrode is deposited. In an MS contact, the studies made in literature have shown that the barrier height could be either increased or decreased by using an interlayer on the semiconductor substrate. The new electrical properties of the MS contacts can be promoted by means of the choice of suitable interlayer. The suitable interface layers such as TiO2, WO3, MoO3, SnO2, In2O3,etc.based MIS structure has been used for switching devices, where the presence of the insulating layer of would provide lower leakage current and reducing power consumption. MIS based SBDs has been fabricated with SiO2, Si3 N4, ZrO2 and HfO2 etc. as an insulating layer and conventional metal electrodes (Pt, Cu, Ni, Au etc.). The low leakage current is an important aspect in photodiode, There are also many studies on the metal-insulator-semiconductor (MIS) based SBD in particular owing to the advantage in such as lower leakage current and higher rectification ratio.

Among these molybdenum trioxide (MoO3) has been recently attracting rapid interest due to it is unique layered structure and is a promising material due to their high electrical conductivity and optical transmittance in the visible region which enable them to be suitable for optoelectronic devices. Commonly observed phases in MoO3 thin films are α-MoO3 (orthorhombic), β-MoO3 (monoclinic) and h-MoO3 (hexagonal). These three phases have different physical and chemical properties, like good crystalline size, refractive index, wide bandgap energy, absorbance, electrical conductivity, coloration, transparency and mechanical hardness. In the solid state, hydrous α-MoO3 is composed of double layers of distorted MoO6 octahedral in an orthorhombic crystal, which are held together by weak van der Waals force. These MoO3 have been widely used in the fields of solar cells, diodes, gas sensors, batteries, pseudo capacitors and biomedical. This α-MoO3 phase can be easily obtained in air atmosphere. More over MoO3 thin films are prepared by different methods such as atomic layer deposition, spin coating, chemical vapour deposition (CVD), magnetron sputtering, chemical bath deposition (CBD) and jet nebulizer spray pyrolysis (JNSP). Among these techniques the JNSP technique has many advantages such as low cost, easy to handle, large area deposition, uniform coating and less deposition time. Reported on the influence of metal work function and incorporation of Sr atom on WO3 thin films for SBDs using JNSP techniques.

In this communication was to investigate the Zr-MoO3 SBDs parameters of a new diode fabricated using a functional group of Cu/Zr-MoO3/p-Si MIS diode. The purpose of this SBDs calculation of current-voltage (I-V) measurement was carried out to obtain barrier height, and ideality factor of the device.